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parameter max. units v ds drain- source voltage 20 v i d @ t a = 25c continuous drain current, v gs @ 4.5v 7.0 i d @ t a = 70c continuous drain current, v gs @ 4.5v 5.5 a i dm pulsed drain current 28 p d @t a = 25c power dissipation 2.0 p d @t a = 70c power dissipation 1.3 linear derating factor 16 mw/c v gs gate-to-source voltage 12 v t j, t stg junction and storage temperature range -55 to + 150 c 07/09/08
www.irf.com 1 IRF7331PBF hexfet power mosfet v dss r ds(on) max (m i d 20v 30@v gs = 4.5v 7.0a 45@v gs = 2.5v 5.6a so-8 these n-channel hexfet ? power mosfet s from international rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. this benefit provides the designer with an extremely efficient device for use in battery and load management applications. the so-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. with these improvements, multiple devices can be used in an application with dramatically reduced board space. the package is designed for vapor phase, infrared, or wave soldering technique description ultra low on-resistance dual n-channel mosfet surface mount available in tape & reel lead-free d1 d1 d2 d2 g1 s2 g2 s1 top view 8 1 2 3 4 5 6 7 symbol parameter typ. max. units r jl junction-to-drain lead ??? 42 r ja junction-to-ambient ??? 62.5 c/w thermal resistance pd - 95266a
2 www.irf.com parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? 1.2 v t j = 25c, i s = 2.0a, v gs = 0v t rr reverse recovery time ??? 31 47 ns t j = 25c, i f = 2.0a q rr reverse recovery charge ??? 15 23 nc di/dt = 100a/s source-drain ratings and characteristics 28 2.0 repetitive rating; pulse width limited by max. junction temperature. pulse width 400s; duty cycle surface mounted on 1 in square cu board parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 20 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.013 ??? v/c reference to 25c, i d = 1ma ??? ??? 30 v gs = 4.5v, i d = 7.0a ??? ??? 45 v gs = 2.5v, i d = 5.6a v gs(th) gate threshold voltage 0.6 ??? 1.2 v v ds = v gs , i d = 250a g fs forward transconductance 14 ??? ??? s v ds = 10v, i d = 7.0a ??? ??? 1.0 v ds = 16v, v gs = 0v ??? ??? 25 v ds = 16v, v gs = 0v, t j = 70c gate-to-source forward leakage ??? ??? 100 v gs = 12v gate-to-source reverse leakage ??? ??? -100 v gs = -12v q g total gate charge ??? 13 20 i d = 7.0a q gs gate-to-source charge ??? 3.7 ??? nc v ds = 10v q gd gate-to-drain ("miller") charge ??? 2.1 ??? v gs = 4.5v t d(on) turn-on delay time ??? 7.6 ??? v dd = 10v t r rise time ??? 22 ??? i d = 1.0a t d(off) turn-off delay time ??? 110 ??? r g = 53 ? t f fall time ??? 50 ??? v gs = 4.5v c iss input capacitance ??? 1340 ??? v gs = 0v c oss output capacitance ??? 170 ??? pf v ds = 16v c rss reverse transfer capacitance ??? 120 ??? ? = 1.0mhz electrical characteristics @ t j = 25c (unless otherwise specified) m ? r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current

s d g
www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 7.5v 4.5v 3.5v 3.0v 2.5v 2.0v 1.75v 1.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 1.50v 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 7.5v 4.5v 3.5v 3.0v 2.5v 2.0v 1.75v 1.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 1.50v 1 10 100 1.5 2.0 2.5 3.0 v = 15v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 4.5v 7.0a
4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0 4 8 12 16 20 0 2 4 6 8 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 7.0a v = 10v ds 1 10 100 v ds , drain-to-source voltage (v) 0 400 800 1200 1600 2000 2400 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0.1 1 10 100 v ds , drain-tosource voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec
www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0.0 2.0 4.0 6.0 8.0 t , case temperature ( c) i , drain current (a) c d fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 % + -
6 www.irf.com fig 13. typical on-resistance vs. drain current fig 12. typical on-resistance vs. gate voltage fig 14b. gate charge test circuit fig 14a. basic gate charge waveform q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 2.0 4.0 6.0 8.0 v gs, gate -to -source voltage (v) 0.01 0.02 0.03 0.04 0.05 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = 7.0a 0 5 10 15 20 25 30 i d , drain current (a) 0.00 0.02 0.04 0.06 0.08 0.10 0.12 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) v gs = 4.5v v gs = 2.5v
www.irf.com 7 fig 15. typical vgs(th) vs. junction temperature typical power vs. time -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a 0.0001 0.0010 0.0100 0.1000 1.0000 10.0000 100.0000 time (sec) 0 10 20 30 40 50 60 p o w e r ( w )
8 www.irf.com so-8 package outline (mosfet & fetky)

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$%$ ! ! ! $$ & ! dimensions are shown in milimeters (inches) so-8 part marking information

note: for the most current drawing please refer to ir website at: http://www.irf.com/package/
www.irf.com 9 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 07/2008 note: for the most current drawing please refer to ir website at: http://www.irf.com/package/

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